Infineon BSZ130N03LSG: High-Efficiency Power MOSFET for Advanced Switching Applications
The relentless demand for higher efficiency and power density in modern electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon BSZ130N03LSG, a power MOSFET engineered to excel in advanced switching applications. This component represents a significant leap forward, offering designers a potent combination of low losses, high robustness, and exceptional switching performance.
A key highlight of the BSZ130N03LSG is its exceptionally low on-state resistance (R DS(on)) of just 1.3 mΩ (max). This ultra-low resistance is paramount for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact thermal management solutions. Whether deployed in synchronous rectification stages of switch-mode power supplies (SMPS) or in motor control circuits, this characteristic ensures that more power is delivered to the load and less is wasted as heat.
Complementing its low conduction losses is the MOSFET's superior switching performance. Fabricated with Infineon's advanced OptiMOS™ technology, the BSZ130N03LSG features low gate charge (Q G ) and low figures of merit (FOMs like R DS(on) Q G ). This allows for very fast switching transitions, which is critical for high-frequency operation. The ability to operate efficiently at higher frequencies enables designers to reduce the size of passive components like inductors and capacitors, thereby increasing the overall power density of the end product.
The device is housed in a space-saving PG-TSDSON-8 (3.3x3.3) package, making it an ideal choice for applications where board real estate is at a premium. Despite its small footprint, it does not compromise on thermal performance. The package offers a low thermal resistance, ensuring effective heat dissipation and reliable operation even under demanding conditions.
Furthermore, the BSZ130N03LSG is characterized by its high robustness and reliability. It features a high maximum drain current (I D ) and avalanche ruggedness, providing a safety margin for handling unexpected voltage transients and overload conditions in real-world applications. This built-in resilience makes it a trustworthy component for mission-critical systems in industrial, computing, and automotive environments.
ICGOODFIND: The Infineon BSZ130N03LSG stands out as a top-tier power MOSFET, delivering a winning combination of ultra-low R DS(on), fast switching speed, and excellent thermal performance in a miniature package. It is a cornerstone component for engineers aiming to push the boundaries of efficiency and power density in modern power conversion systems.
Keywords: Power MOSFET, Low RDS(on), High-Efficiency, Fast Switching, OptiMOS™ Technology
