Infineon BSC057N08NS3GATMA1 80V OptiMOS Power MOSFET: Datasheet and Application Overview

The Infineon BSC057N08NS3GATMA1 is a state-of-the-art N-channel power MOSFET from Infineon's renowned OptiMOS™ family, engineered to deliver exceptional efficiency and robustness in a compact package. Designed with a voltage rating of 80V and a continuous drain current (I_D) of 100A at 25°C, this MOSFET is optimized for high-performance switching applications. Its standout feature is an ultra-low typical on-state resistance (R_DS(on)) of just 5.7 mΩ at 10 V, which is a key factor in minimizing conduction losses and improving overall system efficiency.

Housed in the space-saving SuperSO8 (LFPAK) package, this component is ideal for applications where board space is at a premium. The advanced trench technology employed ensures low gate charge (Q_G) and exceptional switching performance, making it perfectly suited for high-frequency operation. The device is also characterized by its high avalanche ruggedness and 100% repetitive avalanche tested, guaranteeing reliability under harsh operating conditions.

Primary Applications:

This MOSFET is a premier choice for a diverse range of power management systems. Its primary applications include:

Synchronous Rectification in switched-mode power supplies (SMPS) and DC-DC converters.

Motor Control circuits for industrial drives, robotics, and automotive systems.

Load Switching and power distribution in server, telecom, and computing infrastructure.

Battery Management Systems (BMS) and protection circuits.

Datasheet Key Parameters:

A thorough review of the datasheet reveals several critical specifications that define its operational limits and advantages:

Drain-Source Voltage (V_DS): 80 V

Continuous Drain Current (I_D): 100 A (at T_case = 25°C)

R_DS(on) (max): 6.7 mΩ (V_GS = 10 V)

Gate Threshold Voltage (V_GS(th)): 2.3 V - 3.1 V

Total Gate Charge (Q_g): 26 nC (typical)

Avalanche Energy (E_AS): 260 mJ

Design Considerations:

For optimal performance, designers must pay close attention to the layout of the PCB. Minimizing parasitic inductance in the high-current loop is crucial to reduce voltage spikes and ensure stable switching. Furthermore, a sufficiently powerful gate driver is required to quickly transition the MOSFET through its Miller Plateau, thereby minimizing switching losses. Adequate thermal management is also essential, as the high current capability can generate significant heat; proper heatsinking or PCB copper area is necessary to maintain the junction temperature within safe limits.

ICGOOODFIND Summary:

The Infineon BSC057N08NS3GATMA1 stands out as a highly efficient and reliable power switch for demanding applications. Its winning combination of extremely low R_DS(on), high current handling, and a thermally enhanced package makes it an superior solution for engineers aiming to maximize power density and efficiency in modern electronic designs, from advanced computing to automotive systems.

Keywords:

OptiMOS, Low R_DS(on), Power Efficiency, Synchronous Rectification, SuperSO8