Infineon BSZ084N08NS5: A High-Performance 80 V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon BSZ084N08NS5 stands as a testament to these engineering goals, representing a significant advancement in MOSFET technology. As part of Infineon's esteemed OptiMOS™ 5 80 V family, this power MOSFET is engineered to deliver exceptional performance in a wide array of demanding applications, from industrial motor drives and power supplies to solar inverters and battery management systems.

The core of this device's superiority lies in its ultra-low figure-of-merit (R DS(on) Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 0.84 mΩ at 10 V, it minimizes conduction losses significantly. This allows for more current to be handled in a smaller footprint, directly enabling higher power density designs. Concurrently, its optimized gate charge (Q G) ensures extremely fast switching capabilities, which drastically reduces switching losses. This combination is crucial for high-frequency switching topologies, where efficiency gains translate directly into reduced heat generation, smaller heatsinks, and ultimately, lower system costs and higher reliability.

Beyond raw switching performance, the BSZ084N08NS5 is designed for robustness. Its high avalanche ruggedness and exceptional body diode behavior ensure operational stability even under the most strenuous conditions, such as during voltage spikes or hard commutation events. The device is also qualified according to the JEDEC standard for power MOSFETs, guaranteeing high quality and long-term performance. Furthermore, its PQFN 5x6 mm SMD package offers an excellent thermal connection to the PCB, facilitating efficient heat dissipation and simplifying the manufacturing process through its clip-bonded technology.

ICGOOODFIND: The Infineon BSZ084N08NS5 is a premier choice for designers seeking to push the boundaries of efficiency and power density. Its industry-leading low R DS(on), fast switching characteristics, and robust construction make it an ideal solution for high-performance, high-reliability applications across industrial and renewable energy sectors.

Keywords: OptiMOS™ 5, Ultra-low R DS(on), High Power Density, Fast Switching, High Avalanche Ruggedness.