Infineon BSB028N06NN3G: 30V N-Channel MOSFET for High-Efficiency Power Conversion

The demand for high-efficiency power conversion continues to grow across various industries, from automotive systems and server power supplies to portable electronics and battery management. At the heart of many modern power conversion designs lies the MOSFET, a critical component responsible for switching performance and overall system efficiency. The Infineon BSB028N06NN3G stands out as a high-performance 30V N-Channel MOSFET engineered specifically to meet these demanding requirements.

Built using Infineon’s advanced OptiMOS™ technology, this MOSFET is designed to deliver exceptional efficiency and power density. With a very low maximum on-state resistance (RDS(on)) of just 2.8 mΩ at 10 V, it minimizes conduction losses significantly. This characteristic is paramount in high-current applications, as it directly translates into reduced heat generation and higher overall system efficiency. Whether used in synchronous rectification, DC-DC converters, or motor control circuits, the low RDS(on) ensures that more power is delivered to the load with minimal waste.

Another key advantage of the BSB028N06NN3G is its optimized switching performance. The device features low gate charge (Qg) and figures of merit that allow for faster switching frequencies. This enables power supply designers to shrink the size of magnetic components and capacitors, leading to more compact and lighter end products without sacrificing performance. The ability to operate efficiently at higher frequencies is crucial for modern switch-mode power supplies (SMPS) that aim for higher power density.

Robustness and reliability are also integral to its design. The 30V drain-source voltage (VDS) rating makes it an ideal candidate for 24V bus systems and secondary side applications, such as in computing and telecom infrastructure. Furthermore, the MOSFET offers an excellent safe operating area (SOA) and is housed in a SuperSO8 package, which provides superior thermal performance compared to standard SO-8 packages. This enhanced thermal efficiency allows the device to handle high power levels while maintaining a lower operating temperature, thereby improving long-term reliability.

In applications like battery protection switches, OR-ing functionality, and high-frequency DC-DC converters, the BSB028N06NN3G provides a compelling blend of low losses, high switching speed, and thermal stability. It represents a strategic choice for engineers aiming to push the boundaries of efficiency and power density in their next-generation designs.

ICGOOODFIND:

The Infineon BSB028N06NN3G is a top-tier 30V N-Channel MOSFET that excels in high-efficiency power conversion applications. Its ultra-low RDS(on), high switching speed, and superior thermal performance make it an optimal solution for modern power systems demanding reliability, compact size, and maximum efficiency.

Keywords:

Power Efficiency, Low RDS(on), OptiMOS™ Technology, High Switching Frequency, Thermal Performance