Infineon AUIRFN8459TR: A High-Performance 100V Power MOSFET for Demanding Applications

The Infineon AUIRFN8459TR stands as a robust and highly efficient 100V Single N-Channel Power MOSFET packaged in the industry-standard TO-220 package. This component is engineered to deliver superior performance in a wide range of power conversion and switching applications, from industrial motor controls and switch-mode power supplies (SMPS) to automotive systems and robust DC-DC converters.

A key strength of this MOSFET lies in its exceptionally low on-state resistance (RDS(on)), which is typically just 3.7 mΩ. This ultra-low resistance is critical for minimizing conduction losses, leading to higher overall system efficiency and reduced heat generation. By operating cooler, the device enhances reliability and can often allow for a more compact thermal management solution, saving both space and cost in the final design.

The TO-220 package offers an excellent balance of versatility and performance. It is mechanically robust and provides a simple interface for mounting to a heatsink, which is essential for dissipating power in high-current applications. This makes the AUIRFN8459TR a practical choice for both new designs and as a upgrade for existing systems requiring higher efficiency and power density.

Furthermore, the device is characterized by its fast switching speed, which helps to reduce switching losses—a significant factor in high-frequency circuits. This feature, combined with its high avalanche ruggedness, ensures reliable operation even in harsh environments where voltage spikes and inductive load switching are common. The 100V drain-source voltage rating provides a comfortable safety margin in 48V systems, a common voltage in industrial and telecommunications infrastructure.

ICGOOODFIND: The Infineon AUIRFN8459TR is a top-tier component that masterfully combines high voltage capability, ultra-low resistance, and robust packaging. It is an ideal solution for designers seeking to optimize for efficiency, power density, and reliability in demanding power electronics applications.

Keywords: Power MOSFET, Low RDS(on), 100V, TO-220, High Efficiency.