Infineon BSC072N08NS5ATMA1: High-Performance OptiMOS™ 5 Power MOSFET for Advanced Switching Applications

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon Technologies' BSC072N08NS5ATMA1, a benchmark-setting N-channel power MOSFET that exemplifies the pinnacle of performance within the esteemed OptiMOS™ 5 family. Engineered for demanding switching applications, this component is a cornerstone for designers pushing the boundaries of power conversion systems.

Built on a Foundation of Superior Technology

The BSC072N08NS5ATMA1 is constructed using Infineon’s advanced OptiMOS™ 5 process technology. This platform is renowned for its exceptional balance between low on-state resistance (RDS(on)) and low gate charge (Qg). The device boasts an ultra-low typical RDS(on) of just 3.7 mΩ at a gate-source voltage of 10 V. This minimal resistance directly translates to reduced conduction losses, allowing for higher efficiency operation, especially in high-current scenarios. Concurrently, the low gate charge ensures exceptionally fast switching speeds and minimized driving losses, which is critical for high-frequency operation where switching losses typically dominate.

Designed for Demanding Environments

This MOSFET is specified for a drain-source voltage (VDS) of 80 V, making it an ideal candidate for a wide array of industrial and automotive applications. These include:

DC-DC Converters: In server, telecom, and computing power supplies where high efficiency is paramount for reducing energy consumption and thermal management costs.

Motor Control: Driving brushless DC (BLDC) motors in industrial automation, robotics, and automotive systems like electric power steering (EPS) and braking.

Synchronous Rectification: Improving the efficiency of switch-mode power supplies (SMPS) by replacing traditional diodes in secondary-side circuits.

The device is housed in a superSO8 package (PG-TDSON-8), which offers a compact footprint while providing superior thermal performance and power dissipation capabilities compared to standard SO-8 packages. This makes it suitable for space-constrained designs that cannot compromise on power handling.

Key Performance Advantages

The synergy of its electrical characteristics delivers tangible benefits:

Highest Efficiency: The combination of low RDS(on) and Qg leads to optimal overall efficiency across a wide load range.

Increased Power Density: Enables designers to build smaller, more compact power systems by supporting higher switching frequencies without a penalty in efficiency.

Enhanced Robustness: The technology offers improved stability and reliability under strenuous operating conditions.

ICGOOODFIND

The Infineon BSC072N08NS5ATMA1 stands as a top-tier solution for engineers optimizing high-frequency, high-efficiency power conversion circuits. Its outstanding figure-of-merit (FOM) and robust packaging make it a versatile and reliable choice for advancing the performance of modern electronic systems, from data centers to electric vehicles.

Keywords:

1. OptiMOS™ 5

2. Low RDS(on)

3. High-Efficiency

4. Power MOSFET

5. Switching Applications